High quality long wavelength lasers grown by atmospheric pressure MOCVD with liquid group V sources

• Published in: 1993 (5th) International Conference on Indium Phosphide and Related Materials pp. 239 - 242
• Main Authors: Heimbuch, M.E., Holmes, A.L., Mack, M.P., DenBaars, S.P., Coldren, L.A., Bowers, J.E.
• Format: Conference Proceeding
• Language: English
• Published: IEEE 1993
• Subjects: Atmospheric waves; DH-HEMTs; Diode lasers; Doping; Gas lasers; Indium gallium arsenide; Indium phosphide; MOCVD; Solids; Threshold current
• ISBN: 9780780309937; 0780309936
• DOI: 10.1109/ICIPRM.1993.380666

The authors have achieved low threshold In/sub x/Ga/sub 1-x/As/InP quantum well laser diodes, grown in a non-hydride metalorganic chemical vapor deposition system at atmospheric pressure using tertiarybutylarsine and tertiarybutylphosphine. Broad area laser diodes, emitting at 1.3 /spl mu/m, with a 1500 /spl Aring/ GaInAsP active region achieved threshold current densities of 1.25 kA/cm/sup 2/ for 400 micron cavity length. Strained and unstrained quantum wells with luminescence at 1.55 /spl mu/m have been incorporated into the active regions of laser diodes. Lattice matched In/sub 0.53/Ga/sub 0.47/As/InP single quantum well lasers exhibited extremely low threshold current densities of 220 A/cm/sup 2/ for broad area devices 3.5 mm in cavity length. Compressively strained 4 quantum wells devices displayed excellent threshold current densities of 300 A/cm/sup 2/ for 3 mm cavity lengths.< >