High efficiency GaAs/Ge monolithic tandem solar cells

• Published in: Conference Record of the Twentieth IEEE Photovoltaic Specialists Conference pp. 405 - 410 vol.1
• Main Authors: Tobin, S.P., Vernon, S.M., Bajgar, C., Haven, V.E., Geoffroy, L.M., Sanfacon, M.M., Lillington, D.R., Hart, R.E., Emery, K.A., Matson, R.J.
• Format: Conference Proceeding
• Language: English
• Published: IEEE 1988
• Subjects: Coatings; Gallium arsenide; Lithography; MOCVD; NASA; P-n junctions; Photovoltaic cells; Photovoltaic systems; Substrates; Testing
• DOI: 10.1109/PVSC.1988.105732

Two-terminal monolithic tandem cells consisting of a GaAs solar cell grown epitaxially on a Ge solar cell substrate are very attractive for space power applications. Tandem cells of GaAs grown by metal-organic chemical vapor deposition on thin Ge were investigated to address both higher efficiency and reduced weight. Two materials growth issues associated with this heteroepitaxial system, autodoping of the GaAs layers by Ge and diffusion of Ga and As into the Ge substrate, were addressed. The latter appears to result in information of an unintentional p-n junction in the Ge. Early simulator measurements gave efficiencies as high as 21.7% for 4 cm/sup 2/ GaAs/Ge cells, but recent high-altitude testing has given efficiencies of 18%. Sources of errors in simulator measurements of two-terminal tandem cells are discussed. A limiting efficiency of about 36% for the tandem cell at AMO was calculated. Ways to improve the performance of present cells, primarily by increasing the I/sub sc/ and V/sub oc/ of the Ge cell, are proposed.< >