High temperature characterization of implanted-emitter 4H-SiC BJT

High temperature characterization of implanted-emitter 4H-SiC BJT

We demonstrate high-temperature characteristics of the first epi-base, implanted-emitter npn bipolar transistor in 4H-SiC. The device shows high current gain with negative temperature coefficient. The turn-off time decreases with increasing temperature.

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Bibliographic Details
Published in:Proceedings 2000 IEEE/ Cornell Conference on High Performance Devices (Cat. No.00CH37122) pp. 178 - 181
Main Authors: Yi Tang, Fedison, J.B., Chow, T.P.
Format: Conference Proceeding
Language:English
Published: IEEE 2000
Subjects:
Annealing
Bipolar transistors
Circuit testing
Doping
Frequency
Manufacturing
Silicon carbide
Substrates
Temperature
Thermal conductivity
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Description
Summary:We demonstrate high-temperature characteristics of the first epi-base, implanted-emitter npn bipolar transistor in 4H-SiC. The device shows high current gain with negative temperature coefficient. The turn-off time decreases with increasing temperature.
ISBN:9780780363816
0780363817
ISSN:1529-3068
DOI:10.1109/CORNEL.2000.902536