Charging damage in metal-oxide-metal capacitors

The magnetically enhanced reactive ion etching (MERIE) process is well known for causing charging damage to thin gate oxide. Damage to thin gate oxide by the Ar fillet process has been documented (Stamper et al., 1995). In this paper, charging damage to metal-oxide-metal (MOM) capacitors, often used...

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Bibliographic Details

Published in:	1998 3rd International Symposium on Plasma Process-Induced Damage (Cat. No.98EX100) pp. 15 - 17
Main Authors:	Harris, E.B., Gregor, R.W., Dennis, D.C., Lai, T.T., Sen, S., Yan, Y.F., Esry, T., Pita, M.
Format:	Conference Proceeding
Language:	English
Published:	IEEE 1998
Subjects:	Argon Breakdown voltage Capacitors Circuits Dielectrics Etching Magnetic fields Message-oriented middleware Plasma applications Testing
Online Access:	Get full text
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