On the Electro-Thermal 2D FEM Parametric Analysis of SiC Vertical MOSFET Including Gate-Oxide Charge-Trapping Thermal Dependency: Application for Fast Transient Extreme Short-Circuit Operation

This article proposes a generic and complete electro-thermal 4H-SiC physical Mosfet model. Static and transient in hard short-circuit operation behaviors are successfully performed using 2D Comsol™ software. Influence of fixed charges and traps at the 4H-SiC/SiO2 interface has been highlighted, both...

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Bibliographic Details
Published in:	2023 30th International Conference on Mixed Design of Integrated Circuits and System (MIXDES) pp. 212 - 217
Main Authors:	Cazimajou, Thibauld, Sarraute, Emmanuel, Richardeau, Frederic
Format:	Conference Proceeding
Language:	English
Published:	Lodz University of Technology 29-06-2023
Subjects:	Analytical models Electron traps Finite element analysis Finite Element Simulation Mobility models MOSFET Oxide trapped-charges Power Electronics Semiconductor device modeling Short-Circuit Operation SiC Mosfet Software
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Summary:	This article proposes a generic and complete electro-thermal 4H-SiC physical Mosfet model. Static and transient in hard short-circuit operation behaviors are successfully performed using 2D Comsol™ software. Influence of fixed charges and traps at the 4H-SiC/SiO2 interface has been highlighted, both for static and transient. An additional mobility coefficient through Arora's mobility model was then suggested to fully fit the transient model in hard short-circuit operation.
DOI:	10.23919/MIXDES58562.2023.10203258