Ultra-fast CV methods (< 10µs) for interface trap spectroscopy and BTI reliability characterization using MOS capacitors

• Published in: 2022 IEEE International Reliability Physics Symposium (IRPS) pp. 3A.2-1 - 3A.2-6
• Main Authors: Frutuoso, T. Mota, Garros, X., Lugo-Alvarez, J., Kammeugne, R. K., Zouknak, L. D. M., Viey, A., Vandendeale, W., Ferrari, P., Gaillard, F.
• Format: Conference Proceeding
• Language: English
• Published: IEEE 01-03-2022
• Subjects: Aging; Capacitance measurement; CMOS technology; Current measurement; DIT; High-k Oxide; MOS capacitors; Performance evaluation; Semiconductor device measurement; Semiconductor device reliability; Spectroscopy; Time measurement
• ISSN: 1938-1891
• DOI: 10.1109/IRPS48227.2022.9764550

Two Ultra-Fast capacitance characterization methods based on the displacement current measure are explored for MOS capacitance devices. The first method measure the variation of charge obtained from several 100ns short pulses while the second uses a (1 to 5µs/V) continuous ramp to perform the capacitance measurement. Different applications are investigated for each method depending on measurement time and precision. The short pulsed method is used to perform a CV trap spectroscopy. Thanks to distinctive charging and discharging phases we are able to separately extract the capture and emission behavior of interface traps. We demonstrate that BTI characterization can be performed on simple MOScap using CV measurements based on IV ramp as in MOSFET devices. Furthermore, both methods can be combined in oxides presenting a high hysteresis behavior, to separately characterize low frequency oxide trapping from high frequency interface state trapping.