Fully Optimized Cu based process with dedicated cavity etch for 1.75μm and 1.45μm pixel pitch CMOS Image Sensors

• Published in: 2006 International Electron Devices Meeting pp. 1 - 4
• Main Authors: Cohen, M., Roy, F., Herault, D., Cazaux, Y., Gandolfi, A., Reynard, J.P., Cowache, C., Bruno, E., Girault, T., Vaillant, J., Barbier, F., Sanchez, Y., Hotellier, N., LeBorgne, O., Augier, C., Inard, A., Jagueneau, T., Zinck, C., Michailos, J., Mazaleyrat, E.
• Format: Conference Proceeding
• Language: English
• Published: IEEE 01-12-2006
• Subjects: Charge-coupled image sensors; CMOS image sensors; CMOS process; Etching; Implants; Optical crosstalk; Optical filters; Photodiodes; Pixel; Sensor phenomena and characterization
• ISBN: 142440438X; 9781424404384
• ISSN: 0163-1918; 2156-017X
• DOI: 10.1109/IEDM.2006.346976

An innovative process development for sub-2μm CMOS imager sensors is described, leading to tremendous improvements on main pixel parameters like conversion gain, saturation charge, sensitivity, dark current and noise, A full 3MP demonstrator with 1.75μ pixel pitch and 1.45μm pixel pitch have been successfully designed, fabricated and characterized