Study of structure of the TiO2–MoO3 bilayer films by Raman spectroscopy

• Published in: Materials research bulletin Vol. 60; pp. 242 - 246
• Main Authors: Santos, Elias de Barros, Sigoli, Fernando Aparecido, Mazali, Italo Odone
• Format: Journal Article
• Language: English
• Published: Elsevier Ltd 01-12-2014
• Subjects: Chemical synthesis; Raman spectroscopy; Semiconductors; Thin films; Thin films; Semiconductors; Chemical synthesis; Raman spectroscopy
• ISSN: 0025-5408; 1873-4227
• DOI: 10.1016/j.materresbull.2014.08.044

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•TiO2–MoO3 bilayer thin films were easily prepared by dip-coating technique.•Ti and Mo metallo-organic compounds were used as source of its respective oxide.•TiO2 in anatase phase and orthorhombic phase of α-MoO3 were identified.•The bilayer structure was investigated by Raman spectroscopy.
In this work, TiO2–MoO3 films were easily prepared by dip-coating technique and metallo-organic decomposition process (MOD). Raman analyses indicate the formation of TiO2 in anatase phase and orthorhombic phase of α-MoO3. It was observed that the Raman bands intensities attributed to TiO2 and MoO3 oxides were dependent on the number of decomposition–deposition cycles (DDC). The different number of DDC generates films with different thicknesses and the Raman signal was sensitive to this variation. Raman analyses provided qualitative information about the bilayer structure of the bi-component TiO2–MoO3 films, which was confirmed by scanning electron microscopy. In this direction, the dip-coating technique and MOD process can be an efficient strategy to facile preparation of many samples to be used in applications.