Controlling energy deposition during the C 60 + bombardment of silicon: The effect of incident angle geometry

The profile of the energy deposition footprint is controlled during the C 60 + erosion of Si surfaces by varying the incident energy and/or incident angle geometry. Sputter yield, surface topography, and chemical composition of the eroded surfaces were characterized using atomic force microscopy (AF...

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Bibliographic Details

Published in:	Applied surface science Vol. 255; no. 4; pp. 886 - 889
Main Authors:	Kozole, Joseph, Winograd, Nicholas
Format:	Journal Article
Language:	English
Published:	Elsevier B.V 15-12-2008
Subjects:	C 60 Depth profiling Silicon SIMS C 60 SIMS Silicon Depth profiling
Online Access:	Get full text
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