Controlling energy deposition during the C 60 + bombardment of silicon: The effect of incident angle geometry

• Published in: Applied surface science Vol. 255; no. 4; pp. 886 - 889
• Main Authors: Kozole, Joseph, Winograd, Nicholas
• Format: Journal Article
• Language: English
• Published: Elsevier B.V 15-12-2008
• Subjects: C 60; Depth profiling; Silicon; SIMS; C 60; SIMS; Silicon; Depth profiling
• ISSN: 0169-4332; 1873-5584
• DOI: 10.1016/j.apsusc.2008.05.259

The profile of the energy deposition footprint is controlled during the C
60
+ erosion of Si surfaces by varying the incident energy and/or incident angle geometry. Sputter yield, surface topography, and chemical composition of the eroded surfaces were characterized using atomic force microscopy (AFM) and secondary ion mass spectrometry (SIMS). The experiments show that the 10
keV, 40° incident C
60
+ erosion of Si results in the formation of a C containing, mound-like structure on the solid surface. We find that the occurrence of this C feature can be avoided by increasing the incident energy of the C
60
+ projectile or by increasing the incident angle of the C
60
+ projectile. While both strategies allow for the Si samples to be eroded, the occurrence of topographical roughening limits the usefulness of C
60
+ in ultra-high resolution semiconductor depth profiling. Moreover, we find that the relative effect of changing the incident angle geometry of the C
60
+ projectile on the profile of the energy deposition footprint, and thus the sputter yield, changes according to the kinetic energy of the projectile and the material of the bombarded surface, a behavior that is quite different than what is observed for an atomic counterpart.