Improvement of electrical property of Si-doped GaN grown on r -plane sapphire by metalorganic vapor-phase epitaxy

Improvement of electrical property of Si-doped GaN grown on r -plane sapphire by metalorganic vapor-phase epitaxy

Electrical property of Si-doped GaN layers grown on r-plane sapphire substrates by atmospheric metalorganic vapor-phase epitaxy was investigated. The electron mobility was drastically improved when GaN was grown by means of optimized combinations of growth temperature and low-temperature GaN buffer...

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Bibliographic Details
Published in:Physica. B, Condensed matter Vol. 376; pp. 520 - 522
Main Authors: Kusakabe, K., Furuzuki, T., Ohkawa, K.
Format: Journal Article
Language:English
Published: Elsevier B.V 01-04-2006
Subjects:
Electrical property
GaN
MOVPE
Electrical property
81.15.Gh
MOVPE
GaN
81.05.Ea
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Summary:Electrical property of Si-doped GaN layers grown on r-plane sapphire substrates by atmospheric metalorganic vapor-phase epitaxy was investigated. The electron mobility was drastically improved when GaN was grown by means of optimized combinations of growth temperature and low-temperature GaN buffer thickness. The highest room-temperature mobility of 220 cm 2/V s was recorded at the carrier density of 1.1 × 10 18 cm - 3 . Temperature dependence of electrical property revealed that the peak mobility of 234 cm 2/V s was obtained at 249 K. From the slope of carrier density as a function of inverse temperature, the activation energy of Si-donors was evaluated to be 11 meV.
ISSN:0921-4526
1873-2135
DOI:10.1016/j.physb.2005.12.132