Comprehensive study of high- T c interface superconductivity

• Published in: The Journal of physics and chemistry of solids Vol. 71; no. 8; pp. 1098 - 1104
• Main Authors: Logvenov, G., Gozar, A., Butko, V.Y., Bollinger, A.T., Bozovic, N., Radovic, Z., Bozovic, I.
• Format: Journal Article
• Language: English
• Published: Elsevier Ltd 01-08-2010
• Subjects: A. Oxides; A. Thin films; B. Epitaxial growth; D. Crystal structure; D. Superconductivity; A. Thin films; A. Oxides; B. Epitaxial growth; D. Superconductivity; D. Crystal structure
• ISSN: 0022-3697; 1879-2553
• DOI: 10.1016/j.jpcs.2010.03.014

Using ALL-MBE technique, we have synthesized different heterostructures consisting of an insulator La
2CuO
4 (
I) and a metal La
1.56Sr
0.44CuO
4 (
M) layer neither of which is superconducting by itself. The
M–
I bilayers were superconducting with a critical temperature
T
c≈30–36
K. This highly robust phenomenon is confined within 1–2
nm from the interface and is primarily caused by the redistribution of doped holes across the interface. In this paper, we present a comprehensive study of the interface superconductivity by a range of experimental techniques including transport measurements of superconducting properties.