Etching characteristics of photoresist and low- k dielectrics by Ar/O 2 ferrite-core inductively coupled plasmas

• Published in: Microelectronic engineering Vol. 85; no. 2; pp. 300 - 303
• Main Authors: Kim, Hyoun Woo, Lee, Jong Woo, Hwang, Woon Suk, O, Beom Hoan, Lee, Seung Gol, Park, Se-Geun, Kim, Joohee, Chung, Duck Jin, Chang, Sung Pil, Joo, Young-Chang, Joo, Junghoon, Chung, Chin Wook, Park, Wan Jae, Kang, Chang-Jin, Joo, Sukho, Park, Soon Oh, Yoo, Chung-Gon, Kim, Sung Kyeong, Lee, Joung Ho, Cho, Sang-Deog, Choi, Dae-Kyu, Kim, Keeho, Jang, Jeong-Yeol
• Format: Journal Article
• Language: English
• Published: Elsevier B.V 01-02-2008
• Subjects: ICP; Low- k material; Photoresist; Low- k material; ICP; Photoresist
• ISSN: 0167-9317; 1873-5568
• DOI: 10.1016/j.mee.2007.06.016

We have investigated the characteristics of Ar/O
2 plasmas in terms of the photoresist (PR) and low-
k material etching using a ferrite-core inductively coupled plasma (ICP) etcher. We found that the O
2/(O
2+
Ar) gas flow ratio significantly affected the PR etching rate and the PR to low-
k material etch selectivity. Fourier transform infrared spectroscopy (FTIR) and HF dipping test indicated that the etching damage to the low-
k material decreased with decreasing O
2/(O
2
+
Ar) gas flow ratio.