N-methylpyrrolidine-based precursors for chemical vapor deposition of GaN x particles

• Published in: The Journal of physics and chemistry of solids Vol. 73; no. 2; pp. 338 - 342
• Main Authors: Arízaga, Gregorio Guadalupe Carbajal, Reynoso-Soto, Edgar A., López, Oscar Edel Contreras
• Format: Journal Article
• Language: English
• Published: Elsevier Ltd 01-02-2012
• Subjects: A. Nanostructures; A. Organometallic compounds; A. Thin films; B. Vapor deposition; B. Vapor deposition; A. Nanostructures; A. Thin films; A. Organometallic compounds
• ISSN: 0022-3697; 1879-2553
• DOI: 10.1016/j.jpcs.2011.10.013

An attempt to prepare a metalorganic precursor of gallium with reactivity at low temperature in chemical vapor deposition (CVD) systems was done by reacting N-methylpyrrolidine with metal gallium or gallium nitrate under mild conditions. The precursors were bubbled into a CVD assemblage and then reacted with ammonia at temperatures between 400 and 700
°C. The depositions onto silicon substrates were pyramidal particles of 100
nm width at the base and up to 55
nm in height. The rise in growth temperature increased particle density from 0.9 to 27.1 particles per square micron, but reduced the height from 50 to 10 or 2
nm. XPS spectra showed the presence of gallium and nitrogen. The intensity of the gallium spectrum decreased as the process temperature increased indicating that GaN
x
particles were deposited rather than the stoichiometric gallium nitride (GaN). An additional N1s band of impurities appeared whose intensity increases with the reaction temperature. The lower impurity content corresponded to the sample prepared with Ga(NO
3)
3 at 400
°C.
This work describes the synthesis of gallium metalorganic precursors with N-methylpyrrolidine under mild conditions. The precursors reacted with ammonia and formed formed non-stoichiometric gallium nitride (GaN
x
) species at 400
°C, which is a low temperature for a chemical vapor deposition system.
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► Gallium metalorganic (MO) precursors were prepared with N-methylpyrrolidine. ► The MO synthesis was succeeded under mild conditions. ► The precursors reacted with ammonia and formed non-stoichiometric GaN
x
particles. ► GaN
x
depositions occurred between 400 and 700
°C, which is a low growth temperature.