Simulation of Electrical Parameters for Ru/Ta2O5/SiO2/Si(p) High-k MOS Structure

The contribution presents the results of simulation of direct tunnelling of free charge carriers through a thin gateinsulator in MOS structures consisting of a Ta2O5/SiO2 bilayer taking into account also indirect tunnelling of free chargecarriers through the SiO2/Si interface traps. The calculated I...

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Bibliographic Details
Published in:	Advances in electrical and electronic engineering Vol. 7; no. 1-2; pp. 385 - 388
Main Authors:	Racko, Juraj, Harmatha, Ladislav, Breza, Juraj, Benko, Peter, Donoval, Daniel
Format:	Journal Article
Language:	English
Published:	Ostrava Faculty of Electrical Engineering and Computer Science VSB - Technical University of Ostrava 01-03-2008 VSB-Technical University of Ostrava
Subjects:	c-v curves mos structure semiconductor sio2
Online Access:	Get full text
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Summary:	The contribution presents the results of simulation of direct tunnelling of free charge carriers through a thin gateinsulator in MOS structures consisting of a Ta2O5/SiO2 bilayer taking into account also indirect tunnelling of free chargecarriers through the SiO2/Si interface traps. The calculated I-V and C-V curves reveal the processes of electron and holetunnelling through the insulator-to-semiconductor potential barrier that can be divided into four classes.
ISSN:	1336-1376 1804-3119