Ellipsometry and XPS comparative studies of thermal and plasma enhanced atomic layer deposited Al2O3-films

We report on results on the preparation of thin (<100 nm) aluminum oxide (Al2O3) films on silicon substrates using thermal atomic layer deposition (T-ALD) and plasma enhanced atomic layer deposition (PE-ALD) in the SENTECH SI ALD LL system. The T-ALD Al2O3 layers were deposited at 200 °C, for the...

Full description

Bibliographic Details

Published in:	Beilstein journal of nanotechnology Vol. 4; no. 1; pp. 732 - 742
Main Authors:	Haeberle, Jörg, Henkel, Karsten, Gargouri, Hassan, Naumann, Franziska, Gruska, Bernd, Arens, Michael, Tallarida, Massimo, Schmeißer, Dieter
Format:	Journal Article
Language:	English
Published:	Germany Beilstein-Institut 08-11-2013
Subjects:	Al2O3 ALD ellipsometry Full Research Paper Nanoscience Nanotechnology PE-ALD XPS ALD XPS ellipsometry PE-ALD Al2O3
Online Access:	Get full text
Tags:	Add Tag No Tags, Be the first to tag this record!