Composition, time, temperature, and annealing-process dependences of crystalline and amorphous phases in ductile semiconductors Ag2S1−xTex with x = 0.3–0.6

• Published in: AIP advances Vol. 14; no. 1; pp. 015303 - 015303-9
• Main Authors: Sato, Kosuke, Hirata, Keisuke, Matsunami, Masaharu, Takeuchi, Tsunehiro
• Format: Journal Article
• Language: English
• Published: Melville American Institute of Physics 01-01-2024; AIP Publishing LLC
• Subjects: Amorphous semiconductors; Annealing; Composition; Cooling; Crystallization; Ductility; High temperature; Low temperature; Phase diagrams; Phases; Precipitates; Room temperature; Semiconductors; Transport properties
• ISSN: 2158-3226
• DOI: 10.1063/5.0180950

We investigate composition, time, temperature, and annealing-process dependences of crystalline and amorphous phases in ductile semiconductors Ag2S1−xTex with x = 0.3–0.6. We reveal that a metastable amorphous phase containing no secondary phases is obtainable at x = 0.6 even with furnace cooling and possesses ductility in the same manner as the end compound of Ag2S, while the high-temperature phase (HTP) of Ag2S precipitates in the amorphous phase at x = 0.3–0.5 by keeping the good ductility. During the crystallization process of the amorphous phase by annealing a sample at 373–503 K for 4–14 days and cooling it down slowly to room temperature, HTP of Ag2S disappears and the low-temperature phase (LTP) of Ag2S and the Ag5−dTe3 phase appear, while the amorphous phase remains. The ductility is observed for the samples containing the LTP of Ag2S but not for those containing the Ag5−dTe3 phase. Based on the obtained results, the possible phase diagram of Ag2S1−xTex with x = 0.3–0.6 is proposed, and the origin of the ductility in the LTP and HTP of Ag2S and amorphous phase is discussed. We believe that our study is helpful for properly predicting mechanical and transport properties of this material and developing this material as a component of bendable/wearable electronic devices for long-term use.