Photoluminescence of excitons bound to the radiation damage deffects B41 (1.1509 eV) in silicon

Photoluminescence of excitons bound to the radiation damage deffects B41 (1.1509 eV) in silicon

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Bibliographic Details
Published in:Solid state communications Vol. 97; no. 2; pp. 137 - 142
Main Authors: Kaminskii, A.S., Lavrov, E.V., Karasyuk, V.A., Thewalt, M.L.W.
Format: Journal Article
Language:English
Published: 01-01-1996
Online Access:Get full text
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Description
ISSN:0038-1098
DOI:10.1016/0038-1098(95)00614-1