ULTRARAM: A Low‐Energy, High‐Endurance, Compound‐Semiconductor Memory on Silicon (Adv. Electron. Mater. 4/2022)

ULTRARAM: A Low‐Energy, High‐Endurance, Compound‐Semiconductor Memory on Silicon (Adv. Electron. Mater. 4/2022)

ULTRARAM In article number 2101103, Manus Hayne and colleagues demonstrate the successful incorporation of ULTRARAM memories onto Si substrates. ULTRARAM is an emerging non‐volatile memory with the potential to achieve fast, ultralow‐energy electron storage through the use of a triple‐barrier resona...

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Bibliographic Details
Published in:Advanced electronic materials Vol. 8; no. 4
Main Authors: Hodgson, Peter D., Lane, Dominic, Carrington, Peter J., Delli, Evangelia, Beanland, Richard, Hayne, Manus
Format: Journal Article
Language:English
Published: 01-04-2022
Online Access:Get full text
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Summary:ULTRARAM In article number 2101103, Manus Hayne and colleagues demonstrate the successful incorporation of ULTRARAM memories onto Si substrates. ULTRARAM is an emerging non‐volatile memory with the potential to achieve fast, ultralow‐energy electron storage through the use of a triple‐barrier resonant tunnelling heterostructure comprising of III‐V compounds. Incorporation onto silicon substrates is a vital step towards realizing low‐cost, high‐volume production.
ISSN:2199-160X
2199-160X
DOI:10.1002/aelm.202270018