HfSiON n-MOSFETs Using Low-Work Function$hboxHfSi_x$Gate

HfSiON n-MOSFETs Using Low-Work Function$hboxHfSi_x$Gate

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Bibliographic Details
Published in:IEEE electron device letters Vol. 27; no. 9; pp. 762 - 764
Main Authors: Wu, C.H., Hung, B.F., Chin, A., Wang, S.J., Yen, F.Y., Hou, Y.T., Jin, Y., Tao, H.J., Chen, S.C., Liang, M.S.
Format: Journal Article
Language:English
Published: 01-09-2006
Online Access:Get full text
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Description
ISSN:0741-3106
DOI:10.1109/LED.2006.880659