Influence of Atomic Layer Deposition Temperature on the Electrical Properties of Al/ZrO 2 /SiO 2 /4H‐SiC Metal‐Oxide Semiconductor Structures

Influence of Atomic Layer Deposition Temperature on the Electrical Properties of Al/ZrO 2 /SiO 2 /4H‐SiC Metal‐Oxide Semiconductor Structures

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Bibliographic Details
Published in:Physica status solidi. A, Applications and materials science Vol. 215; no. 13
Main Authors: Król, Krystian, Sochacki, Mariusz, Taube, Andrzej, Kwietniewski, Norbert, Gierałtowska, Sylwia, Wachnicki, Łukasz, Godlewski, Marek, Szmidt, Jan
Format: Journal Article
Language:English
Published: 01-07-2018
Online Access:Get full text
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ISSN:1862-6300
1862-6319
DOI:10.1002/pssa.201700882