Improvement of SiO 2 /Si Interface Properties Utilising Fluorine Ion Implantation and Drive-in Diffusion

• Published in: Japanese Journal of Applied Physics Vol. 28; no. 6R; p. 1041
• Main Authors: Ohyu, Kiyonori, Itoga, Toshihiko, Nishioka, Yasushiro, Natsuaki, Nobuyoshi
• Format: Journal Article
• Language: English
• Published: 01-06-1989
• ISSN: 0021-4922; 1347-4065
• DOI: 10.1143/JJAP.28.1041

Thermal drive-in diffusion of ion-implanted F atoms has been employed to fluorinate SiO
2
/Si interfaces and thereby improve their electrical properties. The interface state density can be lowered with little fixed charge generation. Correspondingly, pn-junction surface leakage current decreases. Furthermore, the interfaces can be hardened against hot-electrons due to Fowler-Nordheim current injection and avalanche current at the junction surface. As a result, a fluorinated MOSFET shows higher hot-carrier immunity. It is pointed out that there is an optimal F dose for these improvements to be achieved.