Al 2 O 3 prepared by atomic layer deposition as gate dielectric on 6H-SiC(0001)

Al 2 O 3 films were deposited as alternative gate dielectric on hydrogen-terminated 6H-SiC(0001) by atomic layer chemical vapor deposition and characterized by photoelectron spectroscopy (PES) and admittance measurements. The PES results indicate an abrupt interface free of significant Si–suboxide c...

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Bibliographic Details

Published in:	Applied physics letters Vol. 83; no. 9; pp. 1830 - 1832
Main Authors:	Gao, K. Y., Seyller, Th, Ley, L., Ciobanu, F., Pensl, G., Tadich, A., Riley, J. D., Leckey, R. G. C.
Format:	Journal Article
Language:	English
Published:	01-09-2003
Online Access:	Get full text
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