p n junctions in tungsten diselenide

p n junctions in tungsten diselenide

p n junctions in WSe2 have been fabricated for the first time. 10–20-μm-thick p-type layers were grown epitaxially on n-type substrates by vapor transport at 1060–1070 °C in sealed ampoules. 5–10-mm2 diodes exhibit rectification ratios ∼104 for 0.5-V bias. The diode space charge is ∼10 μm wide, indi...

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Bibliographic Details
Published in:Applied physics letters Vol. 43; no. 1; pp. 79 - 81
Main Authors: Späh, R., Elrod, U., Lux-Steiner, M., Bucher, E., Wagner, S.
Format: Journal Article
Language:English
Published: 01-07-1983
Online Access:Get full text
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Summary:p n junctions in WSe2 have been fabricated for the first time. 10–20-μm-thick p-type layers were grown epitaxially on n-type substrates by vapor transport at 1060–1070 °C in sealed ampoules. 5–10-mm2 diodes exhibit rectification ratios ∼104 for 0.5-V bias. The diode space charge is ∼10 μm wide, indicating a small gradient in the density of electrically active impurities. At room temperature the diode current is dominated by generation/recombination. The current is space-charge limited at lower temperatures.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.94128