Bandgap Restructuring of the Layered Semiconductor Gallium Telluride in Air

A giant bandgap reduction in layered GaTe is demonstrated. Chemisorption of oxygen to the Te‐terminated surfaces produces significant restructuring of the conduction band resulting in a bandgap below 0.8 eV, compared to 1.65 eV for pristine GaTe. Localized partial recovery of the pristine gap is ach...

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Published in:	Advanced materials (Weinheim) Vol. 28; no. 30; pp. 6465 - 6470
Main Authors:	Fonseca, Jose J., Tongay, Sefaattin, Topsakal, Mehmet, Chew, Annabel R., Lin, Alan J., Ko, Changhyun, Luce, Alexander V., Salleo, Alberto, Wu, Junqiao, Dubon, Oscar D.
Format:	Journal Article
Language:	English
Published:	Germany Blackwell Publishing Ltd 01-08-2016 Wiley Blackwell (John Wiley & Sons)
Subjects:	Accessibility band structure modification Chemisorption Company structure Energy gaps (solid state) Gallium gallium telluride Gates layered semiconductors oxygen chemisorption Semiconductors Surface chemistry layered semiconductors gallium telluride oxygen chemisorption band structure modification
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Abstract	A giant bandgap reduction in layered GaTe is demonstrated. Chemisorption of oxygen to the Te‐terminated surfaces produces significant restructuring of the conduction band resulting in a bandgap below 0.8 eV, compared to 1.65 eV for pristine GaTe. Localized partial recovery of the pristine gap is achieved by thermal annealing, demonstrating that reversible band engineering in layered semiconductors is accessible through their surfaces.
AbstractList	A giant bandgap reduction in layered GaTe is demonstrated. Chemisorption of oxygen to the Te-terminated surfaces produces significant restructuring of the conduction band resulting in a bandgap below 0.8 eV, compared to 1.65 eV for pristine GaTe. Localized partial recovery of the pristine gap is achieved by thermal annealing, demonstrating that reversible band engineering in layered semiconductors is accessible through their surfaces.
Author	Chew, Annabel R. Ko, Changhyun Dubon, Oscar D. Tongay, Sefaattin Salleo, Alberto Luce, Alexander V. Fonseca, Jose J. Lin, Alan J. Topsakal, Mehmet Wu, Junqiao
Author_xml	– sequence: 1 givenname: Jose J. surname: Fonseca fullname: Fonseca, Jose J. organization: Department of Materials Science and Engineering, University of California, 94720, Berkeley, CA, USA – sequence: 2 givenname: Sefaattin surname: Tongay fullname: Tongay, Sefaattin organization: Department of Materials Science and Engineering, University of California, CA, 94720, Berkeley, USA – sequence: 3 givenname: Mehmet surname: Topsakal fullname: Topsakal, Mehmet organization: Department of Chemical Engineering and Materials Science, University of Minnesota, MN, 55455, USA – sequence: 4 givenname: Annabel R. surname: Chew fullname: Chew, Annabel R. organization: Department of Materials Science and Engineering, Stanford University, CA, 94305, Palo Alto, USA – sequence: 5 givenname: Alan J. surname: Lin fullname: Lin, Alan J. organization: Department of Materials Science and Engineering, University of California, 94720, Berkeley, CA, USA – sequence: 6 givenname: Changhyun surname: Ko fullname: Ko, Changhyun organization: Department of Materials Science and Engineering, University of California, CA, 94720, Berkeley, USA – sequence: 7 givenname: Alexander V. surname: Luce fullname: Luce, Alexander V. organization: Department of Materials Science and Engineering, University of California, 94720, Berkeley, CA, USA – sequence: 8 givenname: Alberto surname: Salleo fullname: Salleo, Alberto organization: Department of Materials Science and Engineering, Stanford University, CA, 94305, Palo Alto, USA – sequence: 9 givenname: Junqiao surname: Wu fullname: Wu, Junqiao organization: Department of Materials Science and Engineering, University of California, 94720, Berkeley, CA, USA – sequence: 10 givenname: Oscar D. surname: Dubon fullname: Dubon, Oscar D. email: oddubon@berkeley.edu organization: Department of Materials Science and Engineering, University of California, 94720, Berkeley, CA, USA
BackLink	https://www.ncbi.nlm.nih.gov/pubmed/27171481$$D View this record in MEDLINE/PubMed https://www.osti.gov/biblio/1400561$$D View this record in Osti.gov
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Snippet	A giant bandgap reduction in layered GaTe is demonstrated. Chemisorption of oxygen to the Te‐terminated surfaces produces significant restructuring of the... A giant bandgap reduction in layered GaTe is demonstrated. Chemisorption of oxygen to the Te-terminated surfaces produces significant restructuring of the...
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SubjectTerms	Accessibility band structure modification Chemisorption Company structure Energy gaps (solid state) Gallium gallium telluride Gates layered semiconductors oxygen chemisorption Semiconductors Surface chemistry
Title	Bandgap Restructuring of the Layered Semiconductor Gallium Telluride in Air
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