Ferroelectric Polarization Enhanced Optoelectronic Synaptic Response of a CuInP 2 S 6 Transistor Structure

• Published in: ACS nano Vol. 18; no. 44; pp. 30530 - 30539
• Main Authors: Shang, Zixuan, Liu, Lingchen, Wang, Guangcheng, Xu, Hao, Cui, Yuanyuan, Deng, Jianming, Lou, Zheng, Yan, Yinzhou, Deng, Jinxiang, Han, Su-Ting, Zhai, Tianrui, Wang, Xueyun, Wang, Lili, Wang, Xiaolei
• Format: Journal Article
• Language: English
• Published: United States 05-11-2024
• Subjects: CuInP2S6; ferroelectric polarization; synaptic plasticity; gate modulation; optoelectronic synaptic device; neuromorphic computing
• ISSN: 1936-0851; 1936-086X
• DOI: 10.1021/acsnano.4c08810

Neuromorphic computing can simulate brain function and is a pivotal element in next-generation computing, providing a potential solution to the limitations brought by the von Neumann bottleneck. Optoelectronic synaptic devices are highly promising tools for simulating biomimetic nervous systems. In this study, we developed an optoelectronic neuromorphic device with a transistor structure constructed using ferroelectric CuInP
S
. Essential synaptic behaviors in this device are observed in response to light and electrical stimuli. The optoferroelectric coupling is revealed, and the highly tunable gate modulation of the charge carrier is realized in a single device. On this basis, the light adaptation of the biological eyes and smarter Pavlovian dogs was implemented successfully and enhanced by ferroelectric polarization. The gate voltage application promotes the migration of additional Cu
ions in the in-plane direction, thus enhancing the synaptic performance of electrical stimulation. Meanwhile, the processing ability of convolutional kernel noise images in ferroelectric devices has been achieved. Our results offer the important observation and application of ferroelectric polarization-enhanced synaptic properties of a transistor structure and have great potential in promoting the development of two-dimensional van der Waals materials and devices.