Seamless Stitching of Graphene Domains on Polished Copper (111) Foil

• Published in: Advanced materials (Weinheim) Vol. 27; no. 8; pp. 1376 - 1382
• Main Authors: Nguyen, Van Luan, Shin, Bong Gyu, Duong, Dinh Loc, Kim, Sung Tae, Perello, David, Lim, Young Jin, Yuan, Qing Hong, Ding, Feng, Jeong, Hu Young, Shin, Hyeon Suk, Lee, Seung Mi, Chae, Sang Hoon, Vu, Quoc An, Lee, Seung Hee, Lee, Young Hee
• Format: Journal Article
• Language: English
• Published: Germany Blackwell Publishing Ltd 25-02-2015
• Subjects: BOUNDARIES; Chambers; chemical vapor deposition (CVD); Copper; FOIL; Foils; Grain boundaries; grain boundary; Graphene; graphene growth; liquid crystals; Polished; POLISHING; Stitching; Transmission electron microscopy; UV-treatment; chemical vapor deposition (CVD); liquid crystals; grain boundary; graphene growth; UV-treatment
• ISSN: 0935-9648; 1521-4095
• DOI: 10.1002/adma.201404541

Seamless stitching of graphene domains on polished copper (111) is proved clearly not only at atomic scale by scanning tunnelling microscopy (STM) and transmission electron micoscopy (TEM), but also at the macroscale by optical microscopy after UV‐treatment. Using this concept of seamless stitching, synthesis of 6 cm × 3 cm monocrystalline graphene without grain boundaries on polished copper (111) foil is possible, which is only limited by the chamber size.