Radio frequency analog electronics based on carbon nanotube transistors

• Published in: Proceedings of the National Academy of Sciences - PNAS Vol. 105; no. 5; pp. 1405 - 1409
• Main Authors: Kocabas, Coskun, Kim, Hoon-sik, Banks, Tony, Rogers, John A, Pesetski, Aaron A, Baumgardner, James E, Krishnaswamy, S.V, Zhang, Hong
• Format: Journal Article
• Language: English
• Published: United States National Academy of Sciences 05-02-2008; National Acad Sciences
• Subjects: Amplifiers; Analog; Capacitance; Carbon; Circuits; Dielectric materials; Drains; Electric potential; Electrodes; Nanotubes; Narrative devices; Physical Sciences; Power gain; Radio frequency; Receivers & amplifiers; Semiconductors; Transistors
• ISSN: 0027-8424; 1091-6490
• DOI: 10.1073/pnas.0709734105

The potential to exploit single-walled carbon nanotubes (SWNTs) in advanced electronics represents a continuing, major source of interest in these materials. However, scalable integration of SWNTs into circuits is challenging because of difficulties in controlling the geometries, spatial positions, and electronic properties of individual tubes. We have implemented solutions to some of these challenges to yield radio frequency (RF) SWNT analog electronic devices, such as narrow band amplifiers operating in the VHF frequency band with power gains as high as 14 dB. As a demonstration, we fabricated nanotube transistor radios, in which SWNT devices provide all of the key functions, including resonant antennas, fixed RF amplifiers, RF mixers, and audio amplifiers. These results represent important first steps to practical implementation of SWNTs in high-speed analog circuits. Comparison studies indicate certain performance advantages over silicon and capabilities that complement those in existing compound semiconductor technologies.