Application of X-ray topography to USSR and Russian space materials science

• Published in: IUCrJ Vol. 3; no. Pt 3; pp. 200 - 210
• Main Authors: Shul'pina, I L, Prokhorov, I A, Serebryakov, Yu A, Bezbakh, I Zh
• Format: Journal Article
• Language: English
• Published: England International Union of Crystallography 01-05-2016
• Subjects: Aeronautical laboratories; Crystal defects; Crystal growth; Crystallization; defects; Diffraction; Digital imaging; growth striations; Materials research; Materials science; microgravity; physical modelling; Research Papers; semiconductor single crystals; space materials science; Striations; Technology application; thermogravitational convection; X-ray topography; X-rays; Russia; microgravity; physical modelling; semiconductor single crystals; defects; growth striations; space materials science; thermogravitational convection; X-ray topography
• ISSN: 2052-2525; 2052-2525
• DOI: 10.1107/S2052252516003730

The authors' experience of the application of X-ray diffraction imaging in carrying out space technological experiments on semiconductor crystal growth for the former USSR and for Russia is reported, from the Apollo-Soyuz programme (1975) up to the present day. X-ray topography was applied to examine defects in crystals in order to obtain information on the crystallization conditions and also on their changes under the influence of factors of orbital flight in space vehicles. The data obtained have promoted a deeper understanding of the conditions and mechanisms of crystallization under both microgravity and terrestrial conditions, and have enabled the elaboration of terrestrial methods of highly perfect crystal growth. The use of X-ray topography in space materials science has enriched its methods in the field of digital image processing of growth striations and expanded its possibilities in investigating the inhomogeneity of crystals.