Versatile Simple Doping Technique for Diamond by Solid Dopant Source Immersion during Microwave Plasma CVD

We demonstrate a new doping technique for chemical vapor deposition (CVD) growth of diamond. The method involves immersing a solid-state dopant source into the plasma during microwave plasma-assisted CVD. We applied this simple and versatile technique to the growth of boron-doped diamond. The grown...

Full description

Saved in:

Bibliographic Details
Published in:	Chemistry letters Vol. 43; no. 10; pp. 1569 - 1571
Main Authors:	Tamura, Takahiro, Yanase, Takashi, Nagahama, Taro, Wakeshima, Makoto, Hinatsu, Yukio, Shimada, Toshihiro
Format:	Journal Article
Language:	English
Published:	Tokyo The Chemical Society of Japan 05-10-2014 Chemical Society of Japan
Subjects:	Chemical vapor deposition Diamonds Diffraction Dopants Doping Glow discharges Microscopy Resistivity
Online Access:	Get full text
Tags:	Add Tag No Tags, Be the first to tag this record!

Description
Summary:	We demonstrate a new doping technique for chemical vapor deposition (CVD) growth of diamond. The method involves immersing a solid-state dopant source into the plasma during microwave plasma-assisted CVD. We applied this simple and versatile technique to the growth of boron-doped diamond. The grown films were characterized by X-ray diffraction (XRD), Raman microscopy, glow discharge optical emission spectroscopy (GDOES), and electrical conductivity measurements. The average concentration of boron was 0.5 atom % and the conductivity was 1.5 × 10−2 Ω cm, which showed irregular behavior at low temperature.
Bibliography:	ObjectType-Article-1 SourceType-Scholarly Journals-1 ObjectType-Feature-2 content type line 23
ISSN:	0366-7022 1348-0715
DOI:	10.1246/cl.140598