Enhanced Performance of Benzothieno[3,2-b]thiophene (BTT)-Based Bottom-Contact Thin-Film Transistors

• Published in: Chemistry : a European journal Vol. 19; no. 11; pp. 3721 - 3728
• Main Authors: Huang, Peng-Yi, Chen, Liang-Hsiang, Chen, Yu-Yuan, Chang, Wen-Jung, Wang, Juin-Jie, Lii, Kwang-Hwa, Yan, Jing-Yi, Ho, Jia-Chong, Lee, Cheng-Chung, Kim, Choongik, Chen, Ming-Chou
• Format: Journal Article
• Language: English
• Published: Weinheim WILEY-VCH Verlag 11-03-2013; WILEY‐VCH Verlag; Wiley Subscription Services, Inc
• Subjects: Chemistry; conjugation; Correlation; Crystallography, X-Ray; Derivatives; Devices; Microstructure; Models, Molecular; Molecular Structure; Morphology; Semiconductor devices; Semiconductors; Thin film transistors; thin films; thiophenes; Thiophenes - chemical synthesis; Thiophenes - chemistry; transistors; Transistors, Electronic
• ISSN: 0947-6539; 1521-3765
• DOI: 10.1002/chem.201204110

Three new benzothieno[3,2‐b]thiophene (BTT; 1) derivatives, which were end‐functionalized with phenyl (BTT‐P; 2), benzothiophenyl (BTT‐BT; 3), and benzothieno[3,2‐b]thiophenyl groups (BBTT; 4; dimer of 1), were synthesized and characterized in organic thin‐film transistors (OTFTs). A new and improved synthetic method for BTTs was developed, which enabled the efficient realization of new BTT‐based semiconductors. The crystal structure of BBTT was determined by single‐crystal X‐ray diffraction. Within this family, BBTT, which had the largest conjugation of the BTT derivatives in this study, exhibited the highest p‐channel characteristic, with a carrier mobility as high as 0.22 cm2 V−1 s−1 and a current on/off ratio of 1×107, as well as good ambient stability for bottom‐contact/bottom‐gate OTFT devices. The device characteristics were correlated with the film morphologies and microstructures of the corresponding compounds.
Rock bottom: A new and improved synthetic method was developed for the efficient realization of three new benzothieno[3,2‐b]thiophene (BTT) derivatives. These compounds were employed in organic thin‐film transistors and exhibited the p‐channel characteristic with good electrical performance (see graph). Their device characteristics were correlated with their film morphologies and the microstructures of their corresponding compounds.