Experimental validation of state equations and dynamic route maps for phase change memristive devices
Phase Change Memory (PCM) is an emerging technology exploiting the rapid and reversible phase transition of certain chalcogenides to realize nanoscale memory elements. PCM devices are being explored as non-volatile storage-class memory and as computing elements for in-memory and neuromorphic computi...
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| Published in: | Scientific reports Vol. 12; no. 1; p. 6488 |
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| Abstract | Phase Change Memory (PCM) is an emerging technology exploiting the rapid and reversible phase transition of certain chalcogenides to realize nanoscale memory elements. PCM devices are being explored as non-volatile storage-class memory and as computing elements for in-memory and neuromorphic computing. It is well-known that PCM exhibits several characteristics of a memristive device. In this work, based on the essential physical attributes of PCM devices, we exploit the concept of
Dynamic Route Map
(DRM) to capture the complex physics underlying these devices to describe them as memristive devices defined by a state—dependent Ohm’s law. The efficacy of the DRM has been proven by comparing numerical results with experimental data obtained on PCM devices. |
|---|---|
| AbstractList | Abstract Phase Change Memory (PCM) is an emerging technology exploiting the rapid and reversible phase transition of certain chalcogenides to realize nanoscale memory elements. PCM devices are being explored as non-volatile storage-class memory and as computing elements for in-memory and neuromorphic computing. It is well-known that PCM exhibits several characteristics of a memristive device. In this work, based on the essential physical attributes of PCM devices, we exploit the concept of Dynamic Route Map (DRM) to capture the complex physics underlying these devices to describe them as memristive devices defined by a state—dependent Ohm’s law. The efficacy of the DRM has been proven by comparing numerical results with experimental data obtained on PCM devices. Phase Change Memory (PCM) is an emerging technology exploiting the rapid and reversible phase transition of certain chalcogenides to realize nanoscale memory elements. PCM devices are being explored as non-volatile storage-class memory and as computing elements for in-memory and neuromorphic computing. It is well-known that PCM exhibits several characteristics of a memristive device. In this work, based on the essential physical attributes of PCM devices, we exploit the concept of Dynamic Route Map (DRM) to capture the complex physics underlying these devices to describe them as memristive devices defined by a state—dependent Ohm’s law. The efficacy of the DRM has been proven by comparing numerical results with experimental data obtained on PCM devices. Phase Change Memory (PCM) is an emerging technology exploiting the rapid and reversible phase transition of certain chalcogenides to realize nanoscale memory elements. PCM devices are being explored as non-volatile storage-class memory and as computing elements for in-memory and neuromorphic computing. It is well-known that PCM exhibits several characteristics of a memristive device. In this work, based on the essential physical attributes of PCM devices, we exploit the concept of Dynamic Route Map (DRM) to capture the complex physics underlying these devices to describe them as memristive devices defined by a state—dependent Ohm’s law. The efficacy of the DRM has been proven by comparing numerical results with experimental data obtained on PCM devices. |
| ArticleNumber | 6488 |
| Author | Corinto, Fernando Kersting, Benedikt Sebastian, Abu Le Gallo, Manuel Chua, Leon O. Marrone, Francesco Secco, Jacopo |
| Author_xml | – sequence: 1 givenname: Francesco surname: Marrone fullname: Marrone, Francesco email: francesco.marrone@polito.it organization: Department of Electronics and Telecommunications, Politecnico di Torino – sequence: 2 givenname: Jacopo surname: Secco fullname: Secco, Jacopo organization: Department of Electronics and Telecommunications, Politecnico di Torino – sequence: 3 givenname: Benedikt surname: Kersting fullname: Kersting, Benedikt organization: IBM Research - Zurich – sequence: 4 givenname: Manuel surname: Le Gallo fullname: Le Gallo, Manuel organization: IBM Research - Zurich – sequence: 5 givenname: Fernando surname: Corinto fullname: Corinto, Fernando email: fernando.corinto@polito.it organization: Department of Electronics and Telecommunications, Politecnico di Torino – sequence: 6 givenname: Abu surname: Sebastian fullname: Sebastian, Abu email: ase@zurich.ibm.com organization: IBM Research - Zurich – sequence: 7 givenname: Leon O. surname: Chua fullname: Chua, Leon O. organization: Department of Electrical Engineering and Computer Sciences, University of California |
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| Snippet | Phase Change Memory (PCM) is an emerging technology exploiting the rapid and reversible phase transition of certain chalcogenides to realize nanoscale memory... Abstract Phase Change Memory (PCM) is an emerging technology exploiting the rapid and reversible phase transition of certain chalcogenides to realize nanoscale... |
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| Title | Experimental validation of state equations and dynamic route maps for phase change memristive devices |
| URI | https://link.springer.com/article/10.1038/s41598-022-09948-6 https://www.ncbi.nlm.nih.gov/pubmed/35443770 https://www.proquest.com/docview/2652734162 https://search.proquest.com/docview/2653268491 https://pubmed.ncbi.nlm.nih.gov/PMC9021214 https://doaj.org/article/da5545798b074dc19d28b60971bc615d |
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