Experimental validation of state equations and dynamic route maps for phase change memristive devices

• Published in: Scientific reports Vol. 12; no. 1; p. 6488
• Main Authors: Marrone, Francesco, Secco, Jacopo, Kersting, Benedikt, Le Gallo, Manuel, Corinto, Fernando, Sebastian, Abu, Chua, Leon O.
• Format: Journal Article
• Language: English
• Published: London Nature Publishing Group UK 20-04-2022; Nature Publishing Group; Nature Portfolio
• Subjects: 639/166; 639/766; 639/925; Humanities and Social Sciences; multidisciplinary; Phase transitions; Science; Science (multidisciplinary)
• ISSN: 2045-2322; 2045-2322
• DOI: 10.1038/s41598-022-09948-6

Phase Change Memory (PCM) is an emerging technology exploiting the rapid and reversible phase transition of certain chalcogenides to realize nanoscale memory elements. PCM devices are being explored as non-volatile storage-class memory and as computing elements for in-memory and neuromorphic computing. It is well-known that PCM exhibits several characteristics of a memristive device. In this work, based on the essential physical attributes of PCM devices, we exploit the concept of
Dynamic Route Map
(DRM) to capture the complex physics underlying these devices to describe them as memristive devices defined by a state—dependent Ohm’s law. The efficacy of the DRM has been proven by comparing numerical results with experimental data obtained on PCM devices.