RF Characterization of Vertical InAs Nanowire Wrap-Gate Transistors Integrated on Si Substrates

• Published in: IEEE transactions on microwave theory and techniques Vol. 59; no. 10; pp. 2733 - 2738
• Main Authors: Johansson, S., Egard, M., Ghalamestani, S. G., Borg, B. M., Berg, M., Wernersson, L., Lind, E.
• Format: Journal Article
• Language: English
• Published: New York IEEE 01-10-2011; The Institute of Electrical and Electronics Engineers, Inc. (IEEE)
• Subjects: Arrays; Condensed Matter Physics; Den kondenserade materiens fysik; Electric potential; Electrical Engineering, Electronic Engineering, Information Engineering; Elektroteknik och elektronik; Engineering and Technology; Fysik; High- k; InAs; Indium arsenides; Logic gates; MOSFET; Nanocomposites; Nanomaterials; Nanoscale devices; Nanostructure; nanowire; Nanowires; Natural Sciences; Naturvetenskap; Physical Sciences; Radio frequency; Semiconductor devices; Silicon; Silicon substrates; Substrates; Teknik; Transistors
• ISSN: 0018-9480; 1557-9670
• DOI: 10.1109/TMTT.2011.2163076

We present dc and RF characterization of InAs nanowire field-effect transistors (FETs) heterogeneously integrated on Si substrates in a geometry suitable for circuit applications. The FET consists of an array of 182 vertical InAs nanowires with about 6-nm HfO 2 high- k gate dielectric and a wrap-gate length of 250 nm. The transistor has a transconductance of 155 mS/mm and an on-current of 550 mA/mm at a gate voltage of 1.5 V and a drain voltage of 1 V. S -parameter measurements yield an extrinsic cutoff frequency of 9.3 GHz and a extrinsic maximum oscillation frequency of 14.3 GHz.