Development and fabrication of extended short wavelength infrared HgCdTe sensors grown on CdTe/Si substrates by molecular beam epitaxy

•Short-wavelength infrared HgCdTe devices grown on CdTe/Si substrates have been demonstrated.•Data suggests diffusion current dominates near zero bias for large area devices.•Shunt current dominates reverse bias dark current in small devices. The development and fabrication of extended short-wavelen...

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Bibliographic Details
Published in:	Solid-state electronics Vol. 101; pp. 90 - 94
Main Authors:	Simingalam, Sina, VanMil, Brenda L., Chen, Yuanping, DeCuir, Eric A., Meissner, Greg P., Wijewarnasuriya, Priyalal, Dhar, Nibir K., Rao, Mulpuri V.
Format:	Journal Article Conference Proceeding
Language:	English
Published:	Kidlington Elsevier Ltd 01-11-2014 Elsevier
Subjects:	Applied sciences Compound structure devices Diodes Electronics Exact sciences and technology General equipment and techniques HgCdTe Instruments, apparatus, components and techniques common to several branches of physics and astronomy Microelectronic fabrication (materials and surfaces technology) Passivation Physics Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Sensors (chemical, optical, electrical, movement, gas, etc.); remote sensing Short-wavelength infrared Shunt current Shunt current HgCdTe Short-wavelength infrared Passivation Ternary compound Binary compound Arsenic Diode Hall mobility In situ Temperature effect p n junction Dislocation Cut off frequency Microelectronic fabrication Etch pit Cadmium tellurides Rocking curve Molecular beam epitaxy Mercury tellurides Fourier-transformed infrared spectrometry Void Cadmium Defect density Temperature dependence Ion implantation Annealing Charge carrier density Measurement sensor Doped materials Indium Crystalline material Near infrared radiation Engraving
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