Non-centrosymmetric plasmonic crystals for second-harmonic generation with controlled anisotropy and enhancement
Rectangular arrays of pyramidal recesses coated by silver film are investigated by means of polarization‐resolved nonlinear microscopy at 900 nm fundamental wavelength, demonstrating strong dependence of the dipole‐allowed SHG upon the lattice parameters. The plasmonic band gap causes nearly complet...
Saved in:
Published in: | Laser & photonics reviews Vol. 10; no. 2; pp. 287 - 298 |
---|---|
Main Authors: | , , , , |
Format: | Journal Article |
Language: | English |
Published: |
Weinheim
Blackwell Publishing Ltd
01-03-2016
Wiley Subscription Services, Inc |
Subjects: | |
Online Access: | Get full text |
Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
Summary: | Rectangular arrays of pyramidal recesses coated by silver film are investigated by means of polarization‐resolved nonlinear microscopy at 900 nm fundamental wavelength, demonstrating strong dependence of the dipole‐allowed SHG upon the lattice parameters. The plasmonic band gap causes nearly complete SHG suppression in arrays of 650 nm periodicity, whereas a sharp resonance at 550 nm periodicity is observed due to excitation of band edge Bloch states at fundamental frequency, accompanied by symmetry‐constrained interactions with similar modes at the second‐harmonic frequency. Additionally, coupling with modes at the bottom side of the silver film may lead to extraordinary optical transmission, opening a channel for SHG from the highly nonlinear GaAs substrate. Changing the lattice geometry enables SHG intensity modulation over three orders of magnitude, while the effective nonlinear anisotropy can be continuously switched between the two lattice directions, reaching values as high as ±0.96.
Plasmonic band gap and plasmonic band edge resonances are used to engineer the effective second order nonlinear optical susceptibility in rectangular arrays of nanosized pyramidal metallic recesses, obtained by deposition of silver film on a patterned GaAs substrate. |
---|---|
Bibliography: | ark:/67375/WNG-DZF243FB-B istex:79B04719295026BD6302068C2391481EB17B670B Supporting Information ArticleID:LPOR201500212 ObjectType-Article-1 SourceType-Scholarly Journals-1 ObjectType-Feature-2 content type line 23 |
ISSN: | 1863-8880 1863-8899 |
DOI: | 10.1002/lpor.201500212 |