Cubic boron phosphide epitaxy on zirconium diboride

•Cubic boron phosphide epitaxy on ZrB2/SiC and bulk ZrB2 single crystals was demonstrated.•Crystalline defects in the cubic boron phosphide BP films were identified.•The strain states of boron phosphide on the two types of substrates were established. Cubic boron phosphide (BP) is one of the least s...

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Bibliographic Details
Published in:	Journal of crystal growth Vol. 483; no. C; pp. 115 - 120
Main Authors:	Padavala, Balabalaji, Al Atabi, H., Tengdelius, L., Lu, J., Högberg, H., Edgar, J.H.
Format:	Journal Article
Language:	English
Published:	Amsterdam Elsevier B.V 01-02-2018 Elsevier BV Elsevier
Subjects:	A1. Crystal morphology A1. Defects A1. Substrates A3. Chemical vapor deposition processes B2. Semiconducting III-V materials Boron phosphides Compressive properties Electron microscopy Epitaxial layers Epitaxy Group III-V semiconductors Lattice parameters Polycrystals Refractory materials Semiconductors Single crystals Substrates Thermal expansion Thermal stability Transmission electron microscopy Zirconium compounds A3. Chemical vapor deposition processes A1. Crystal morphology B2. Semiconducting III-V materials A1. Substrates A1. Defects Semiconducting III-V materials Chemical vapor deposition processes Crystal morphology Substrates Defects
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