Polycrystalline silicon PhC cavities for CMOS on-chip integration

• Published in: Scientific reports Vol. 12; no. 1; p. 17097
• Main Authors: Iadanza, S., Devarapu, G. C. R., Blake, A., Alba, P. Acosta, Pedini, J.-M., O’Faolain, L.
• Format: Journal Article
• Language: English
• Published: London Nature Publishing Group UK 12-10-2022; Nature Publishing Group; Nature Portfolio
• Subjects: 639/166/987; 639/624/399/1022; 639/624/399/1097; 639/624/399/1099; 639/766/1130; Annealing; Bandwidths; Electronics; Grain boundaries; Humanities and Social Sciences; Integration; Lasers; multidisciplinary; Optical properties; Photonics; Science; Science (multidisciplinary); Silicon; Silicon nitride; Silicon wafers; Transistors
• ISSN: 2045-2322; 2045-2322
• DOI: 10.1038/s41598-022-21578-6

In this work, we present an on-chip 2D and 3D photonics integration solution compatible with Front End of Line integration (FEOL) using deposited polycrystalline silicon (poly:Si) for optical interconnects applications. Deposited silicon integration on a bulk silicon wafer is here discussed in all its processing steps and configurations. Moreover, results of deposited silicon high-Q Photonic Crystal (PhC) resonators are shown, demonstrating the possibility to employ optical resonators patterned on this material in the next generation of 2D and 3D integrated optical interconnects.