Tuning the hysteresis of a metal-insulator transition via lattice compatibility

Structural phase transitions serve as the basis for many functional applications including shape memory alloys (SMAs), switches based on metal-insulator transitions (MITs), etc. In such materials, lattice incompatibility between transformed and parent phases often results in a thermal hysteresis, wh...

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Published in:Nature communications Vol. 11; no. 1; p. 3539
Main Authors: Liang, Y. G., Lee, S., Yu, H. S., Zhang, H. R., Liang, Y. J., Zavalij, P. Y., Chen, X., James, R. D., Bendersky, L. A., Davydov, A. V., Zhang, X. H., Takeuchi, I.
Format: Journal Article
Language:English
Published: London Nature Publishing Group UK 15-07-2020
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Summary:Structural phase transitions serve as the basis for many functional applications including shape memory alloys (SMAs), switches based on metal-insulator transitions (MITs), etc. In such materials, lattice incompatibility between transformed and parent phases often results in a thermal hysteresis, which is intimately tied to degradation of reversibility of the transformation. The non-linear theory of martensite suggests that the hysteresis of a martensitic phase transformation is solely determined by the lattice constants, and the conditions proposed for geometrical compatibility have been successfully applied to minimizing the hysteresis in SMAs. Here, we apply the non-linear theory to a correlated oxide system (V 1− x W x O 2 ), and show that the hysteresis of the MIT in the system can be directly tuned by adjusting the lattice constants of the phases. The results underscore the profound influence structural compatibility has on intrinsic electronic properties, and indicate that the theory provides a universal guidance for optimizing phase transforming materials. The effect of the lattice degrees of freedom on the metal-insulator transition of VO 2 remains a topic of debate. Here the authors show that the lattice compatibility of the high temperature tetragonal phase and the low-temperature monoclinic phase strongly influences the electronic transition, as manifested in the tunability of its hysteresis via chemical substitution.
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ISSN:2041-1723
2041-1723
DOI:10.1038/s41467-020-17351-w