Optical properties of Ar ions irradiated nanocrystalline ZrC and ZrN thin films

Employing wide spectral range (0.06–6 eV) optical reflectance measurements and high energy X-ray photoemission spectroscopy (HE-XPS), we studied the effect of 800 keV Ar ion irradiation on optical and electronic properties of nanocrystalline ZrC and ZrN thin films, which were obtain by the pulsed la...

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Bibliographic Details
Published in:Journal of nuclear materials Vol. 488; pp. 16 - 21
Main Authors: Martin, C., Miller, K.H., Makino, H., Craciun, D., Simeone, D., Craciun, V.
Format: Journal Article
Language:English
Published: Goddard Space Flight Center Elsevier B.V 01-05-2017
Elsevier
Elsevier BV
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Summary:Employing wide spectral range (0.06–6 eV) optical reflectance measurements and high energy X-ray photoemission spectroscopy (HE-XPS), we studied the effect of 800 keV Ar ion irradiation on optical and electronic properties of nanocrystalline ZrC and ZrN thin films, which were obtain by the pulsed laser deposition technique. Both in ZrC and ZrN, we observed that irradiation affects the optical properties of the films mostly at low frequencies, which is dominated by the free carriers response. In both materials, we found a significant reduction in the free carriers scattering rate and an increase of the zero frequency conductivity, i.e. possible increase in mobility, at higher irradiation fluence. This is consistent with our previous findings that irradiation affects the crystallite size and the micro-strain, but it does not induce major changes in the chemical bonding. HE-XPS investigations further confirms the stability of the Zr-C and Zr-N bonds, despite a small increase in the surface region of the Zr-O bonds fraction with increasing irradiation fluence.
Bibliography:GSFC
GSFC-E-DAA-TN29618
Goddard Space Flight Center
ObjectType-Article-1
SourceType-Scholarly Journals-1
ObjectType-Feature-2
content type line 23
ISSN:0022-3115
1873-4820
DOI:10.1016/j.jnucmat.2017.02.041