Cross-sectional scanning tunneling microscopy studies of lattice-matched InGaAs/InP quantum wells: variations in growth switching sequence
Cross-sectional scanning tunneling microscopy has been used to study variations in the source gas switching sequences in lattice-matched InGaAs/InP heterostructures grown by chemical beam epitaxy. Using finite element analysis, changes in well–barrier interface strain can be understood in terms of A...
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| Published in: | Journal of crystal growth Vol. 249; no. 3; pp. 437 - 444 |
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| Main Authors: | , , , |
| Format: | Journal Article |
| Language: | English |
| Published: |
Elsevier B.V
01-03-2003
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| Online Access: | Get full text |
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| Summary: | Cross-sectional scanning tunneling microscopy has been used to study variations in the source gas switching sequences in lattice-matched InGaAs/InP heterostructures grown by chemical beam epitaxy. Using finite element analysis, changes in well–barrier interface strain can be understood in terms of As/P exchange and As memory effect in the growth chamber. Results from annealed samples indicate a greater interdiffusion of group-V species than group-III species. |
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| Bibliography: | ObjectType-Article-2 SourceType-Scholarly Journals-1 ObjectType-Feature-1 content type line 23 |
| ISSN: | 0022-0248 1873-5002 |
| DOI: | 10.1016/S0022-0248(02)02224-8 |