High quality InAs and GaSb thin layers grown on Si (1 1 1)

• Published in: Journal of crystal growth Vol. 332; no. 1; pp. 12 - 16
• Main Authors: Gorji Ghalamestani, Sepideh, Berg, Martin, Dick, Kimberly A., Wernersson, Lars-Erik
• Format: Journal Article
• Language: English
• Published: Amsterdam Elsevier B.V 01-10-2011; Elsevier
• Subjects: A1. Nucleation; A3. Metalorganic vapor phase epitaxy; antimonide; B1. Gallium antimonide; B1. Indium arsenide; Cross-disciplinary physics: materials science; rheology; Crystal growth; Deposition; Engineering and Technology; Exact sciences and technology; Gallium; Indium arsenide; Indium arsenides; Materials Engineering; Materials science; Materialteknik; Metalorganic vapor phase epitaxy; Methods of deposition of films and coatings; film growth and epitaxy; Nanoscale materials and structures: fabrication and characterization; Nanowires; Nucleation; Physics; Quantum wires; Roughness; Silicon substrates; Teknik; Theory and models of film growth; Thin films; Vapor phase epitaxy; growth from vapor phase; B1. Indium arsenide; A3. Metalorganic vapor phase epitaxy; A1. Nucleation; B1. Gallium antimonide; Gallium antimonides; Epitaxial layers; Nucleation; Surface morphology; Roughness; VPE; Indium arsenides; III-V compound; Thin films; MOVPE method; Growth mechanism; Crystal faces; Nanowires; Carrier density; Nanostructured materials; III-V semiconductors
• ISSN: 0022-0248; 1873-5002
• DOI: 10.1016/j.jcrysgro.2011.03.062

We have investigated growth of thin epitaxial layers of InAs on Si (1
1
1) substrates by metalorganic vapor phase epitaxy (MOVPE) and successfully grown GaSb layers on InAs. Furthermore, we have studied the effect of growth temperature and material flow on the nucleation stage and also nucleated GaSb nanowires on the underlying GaSb layer. The InAs layers are grown by a standard two-step growth approach. The main parameter under investigation is the effect of incorporating more nucleation layers into the growth process. The addition of more nucleation layers clearly correlates with the surface morphology and quality of the resulting InAs layer. Morphological and structural characterizations prove that a perfect quality InAs layer is achieved by incorporating 4 nucleation layers. Deposited layers with 250
nm thickness and 0.4
nm atomic step roughness have a mobility of 2400
cm
2/Vs and a carrier concentration of 2.7×10
18
cm
−3. Moreover, we have utilized the InAs film to grow a GaSb layer and observed atomic step roughness for a thin film of ∼300
nm. Finally we demonstrate the growth of GaSb nanowires on the GaSb layer.
► InAs layer growth on Si (1
1
1) by MOVPE. ► GaSb on InAs (1
1
1). ► GaSb nanowire growth on GaSb (1
1
1).