Unraveling structural and compositional information in 3D FinFET electronic devices
Non-planar Fin Field Effect Transistors (FinFET) are already present in modern devices. The evolution from the well-established 2D planar technology to the design of 3D nanostructures rose new fabrication processes, but a technique capable of full characterization, particularly their dopant distribu...
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| Published in: | Scientific reports Vol. 9; no. 1; pp. 11629 - 7 |
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| Main Authors: | , , , , , , , , , , , |
| Format: | Journal Article |
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| Abstract | Non-planar Fin Field Effect Transistors (FinFET) are already present in modern devices. The evolution from the well-established 2D planar technology to the design of 3D nanostructures rose new fabrication processes, but a technique capable of full characterization, particularly their dopant distribution, in a representative (high statistics) way is still lacking. Here we propose a methodology based on Medium Energy Ion Scattering (MEIS) to address this query, allowing structural and compositional quantification of advanced 3D FinFET devices with nanometer spatial resolution. When ions are backscattered, their energy losses unfold the chemistry of the different 3D compounds present in the structure. The FinFET periodicity generates oscillatory features as a function of backscattered ion energy and, in fact, these features allow a complete description of the device dimensions. Additionally, each measurement is performed over more than thousand structures, being highly representative in a statistical meaning. Finally, independent measurements using electron microscopy corroborate the proposed methodology. |
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| AbstractList | Abstract
Non-planar Fin Field Effect Transistors (FinFET) are already present in modern devices. The evolution from the well-established 2D planar technology to the design of 3D nanostructures rose new fabrication processes, but a technique capable of full characterization, particularly their dopant distribution, in a representative (high statistics) way is still lacking. Here we propose a methodology based on Medium Energy Ion Scattering (MEIS) to address this query, allowing structural and compositional quantification of advanced 3D FinFET devices with nanometer spatial resolution. When ions are backscattered, their energy losses unfold the chemistry of the different 3D compounds present in the structure. The FinFET periodicity generates oscillatory features as a function of backscattered ion energy and, in fact, these features allow a complete description of the device dimensions. Additionally, each measurement is performed over more than thousand structures, being highly representative in a statistical meaning. Finally, independent measurements using electron microscopy corroborate the proposed methodology. Non-planar Fin Field Effect Transistors (FinFET) are already present in modern devices. The evolution from the well-established 2D planar technology to the design of 3D nanostructures rose new fabrication processes, but a technique capable of full characterization, particularly their dopant distribution, in a representative (high statistics) way is still lacking. Here we propose a methodology based on Medium Energy Ion Scattering (MEIS) to address this query, allowing structural and compositional quantification of advanced 3D FinFET devices with nanometer spatial resolution. When ions are backscattered, their energy losses unfold the chemistry of the different 3D compounds present in the structure. The FinFET periodicity generates oscillatory features as a function of backscattered ion energy and, in fact, these features allow a complete description of the device dimensions. Additionally, each measurement is performed over more than thousand structures, being highly representative in a statistical meaning. Finally, independent measurements using electron microscopy corroborate the proposed methodology. Non-planar Fin Field Effect Transistors (FinFET) are already present in modern devices. The evolution from the well-established 2D planar technology to the design of 3D nanostructures rose new fabrication processes, but a technique capable of full characterization, particularly their dopant distribution, in a representative (high statistics) way is still lacking. Here we propose a methodology based on Medium Energy Ion Scattering (MEIS) to address this query, allowing structural and compositional quantification of advanced 3D FinFET devices with nanometer spatial resolution. When ions are backscattered, their energy losses unfold the chemistry of the different 3D compounds present in the structure. The FinFET periodicity generates oscillatory features as a function of backscattered ion energy and, in fact, these features allow a complete description of the device dimensions. Additionally, each measurement is performed over more than thousand structures, being highly representative in a statistical meaning. Finally, independent measurements using electron microscopy corroborate the proposed methodology. The aggressive roadmap of complementary metal oxide semiconductor (CMOS) transistors technology has been driving for decades the principal advances in nanotechnology fabrication methods, tools and characterization, from which innumerous other science fields benefit today. In the last few years we have experienced a major transition from 2D planar transistors to 3D Fin Field Emission Transistors (FinFET) 1 . Furthermore, devices based on 3D NanoSheet transistors architecture are announced for upcoming sub 5-nm node 2,3 . As a consequence, challenges for the characterization and metrology of increasingly sophisticated materials and processes have to be addressed, now in 3D structures. While traditional 1D characterization techniques such as Secondary Ion Mass Spectrometry (SIMS) are routinely used for fundamental studies/developments, the transposition to intricate topology at such a small dimension and high density is not straightforward 4 . Information on the structural and compositional variations of conformal layer deposition are of high value for the industry, for example in the complex high-k and related oxide layers used for the metal gate 5,6 , or such as doping of 3D transistors for the formation of optimized junctions. More recently, the development of Atom Probe Tomography (APT) offered an inherent 3D technique, but in practice, it revealed the need of considerable further developments from sample preparation to reconstruction algorithms in order to be used as a reliable technique with reasonable throughput 7 . Therefore, at the moment, the task relies fundamentally on Transmission Electron Microscopy (TEM) based techniques. However, this implies into special care on artifacts of sample preparation and, as well as for APT, intrinsic limited statistics. As a complementary technique to address some of these issues, here, we extend the capabilities of Medium Energy Ion Scattering (MEIS) to develop a non-destructive method for the structural characterization of 3D electronic nanostructures. To demonstrate the approach we used an array of Silicon-On-Insulator fins doped with As ions by Plasma Immersion Ion Implantation (PIII). Using a two-fold angular MEIS detection, we separate the signal from backscattered ions that follows an unperturbed flight back to the detector from the ions that cross the fins. While the energy loss of ions provides the information on the chemistry of the different 3D components of the structure, we also show that the periodicity of the fin array generates oscillatory features as a function of the ion energy and the detection angle, allowing the determination of height, width and average interdistance between fins (fin-pitch) i.e. a full compositional and dimensional reconstruction. Each measurement is |
| ArticleNumber | 11629 |
| Author | Trombini, Henrique Marmitt, Gabriel Guterres Senna, Carlos Alberto Achete, Carlos Alberto Archanjo, Bráulio Soares Baptista, Daniel Lorscheitter Pinheiro, Rafael Bortolin Sanchez, Dario Ferreira Alencar, Igor Mazen, Frédéric Reboh, Shay Grande, Pedro Luis |
| Author_xml | – sequence: 1 givenname: Henrique surname: Trombini fullname: Trombini, Henrique email: henrique.trombini@ufrgs.br organization: Ion Implantation Laboratory, Institute of Physics, Federal University of Rio Grande do Sul, CEP – sequence: 2 givenname: Gabriel Guterres surname: Marmitt fullname: Marmitt, Gabriel Guterres organization: Ion Implantation Laboratory, Institute of Physics, Federal University of Rio Grande do Sul, CEP – sequence: 3 givenname: Igor surname: Alencar fullname: Alencar, Igor organization: Ion Implantation Laboratory, Institute of Physics, Federal University of Rio Grande do Sul, CEP – sequence: 4 givenname: Daniel Lorscheitter orcidid: 0000-0002-2658-6412 surname: Baptista fullname: Baptista, Daniel Lorscheitter organization: Ion Implantation Laboratory, Institute of Physics, Federal University of Rio Grande do Sul, CEP – sequence: 5 givenname: Shay surname: Reboh fullname: Reboh, Shay organization: CEA-LETI, MINATEC Campus – sequence: 6 givenname: Frédéric surname: Mazen fullname: Mazen, Frédéric organization: CEA-LETI, MINATEC Campus – sequence: 7 givenname: Rafael Bortolin surname: Pinheiro fullname: Pinheiro, Rafael Bortolin organization: CEA-LETI, MINATEC Campus – sequence: 8 givenname: Dario Ferreira orcidid: 0000-0003-2825-2886 surname: Sanchez fullname: Sanchez, Dario Ferreira organization: Paul Scherrer Instituit – sequence: 9 givenname: Carlos Alberto surname: Senna fullname: Senna, Carlos Alberto organization: National Institute of Metrology, Quality and Technology, CEP – sequence: 10 givenname: Bráulio Soares surname: Archanjo fullname: Archanjo, Bráulio Soares organization: National Institute of Metrology, Quality and Technology, CEP – sequence: 11 givenname: Carlos Alberto surname: Achete fullname: Achete, Carlos Alberto organization: National Institute of Metrology, Quality and Technology, CEP – sequence: 12 givenname: Pedro Luis surname: Grande fullname: Grande, Pedro Luis organization: Ion Implantation Laboratory, Institute of Physics, Federal University of Rio Grande do Sul, CEP |
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B doi: 10.1016/0168-583X(84)90055-7 contributor: fullname: RM Tromp – volume: 468 start-page: 286 year: 2010 ident: 48117_CR5 publication-title: Nature doi: 10.1038/nature09541 contributor: fullname: H Ko – volume: 540 start-page: 285 year: 2003 ident: 48117_CR11 publication-title: Surface Science doi: 10.1016/S0039-6028(03)00840-9 contributor: fullname: IL Bolotin – volume: 355 start-page: 792 year: 2015 ident: 48117_CR20 publication-title: Applied Surface Science doi: 10.1016/j.apsusc.2015.07.068 contributor: fullname: V Vishwanath – ident: 48117_CR8 – ident: 48117_CR18 doi: 10.1109/VLSIT.2010.5556225 – ident: 48117_CR2 – volume: 62 start-page: 31 year: 2017 ident: 48117_CR4 publication-title: Materials Science in Semiconductor Processing doi: 10.1016/j.mssp.2016.10.029 contributor: fullname: W Vandervorst – volume-title: Handbook of modern ion beam materials analysis year: 2009 ident: 48117_CR10 contributor: fullname: Y Wang – volume: 195 start-page: 581 year: 1982 ident: 48117_CR22 publication-title: Nucl. Instrum. Methods Phys. Res. B doi: 10.1016/0029-554X(82)90022-2 contributor: fullname: RG Smeenk – volume: 112 start-page: 051901 year: 2018 ident: 48117_CR3 publication-title: Applied Physics Letters doi: 10.1063/1.5010997 contributor: fullname: S Reboh – volume: 518 start-page: 380 year: 1999 ident: 48117_CR12 publication-title: Astrophys. J. doi: 10.1086/307253 contributor: fullname: KJ Mighell – volume: 365 start-page: 143 year: 2016 ident: 48117_CR17 publication-title: Applied Surface Science doi: 10.1016/j.apsusc.2016.01.056 contributor: fullname: A Franquet |
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| Snippet | Non-planar Fin Field Effect Transistors (FinFET) are already present in modern devices. The evolution from the well-established 2D planar technology to the... Abstract Non-planar Fin Field Effect Transistors (FinFET) are already present in modern devices. The evolution from the well-established 2D planar technology... |
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| StartPage | 11629 |
| SubjectTerms | 639/301/930/12 639/925/927/1007 Electron microscopy Electronic equipment Energy Engineering Sciences Fabrication Humanities and Social Sciences Micro and nanotechnologies Microelectronics Microscopy multidisciplinary Periodicity Science Science (multidisciplinary) Simulation Transistors |
| Title | Unraveling structural and compositional information in 3D FinFET electronic devices |
| URI | https://link.springer.com/article/10.1038/s41598-019-48117-0 https://www.ncbi.nlm.nih.gov/pubmed/31406211 https://www.proquest.com/docview/2272203702 https://cea.hal.science/cea-04791477 https://pubmed.ncbi.nlm.nih.gov/PMC6691105 |
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