Reduction of Dislocations in Single Crystal Diamond by Lateral Growth over a Macroscopic Hole

A low‐dislocation diamond is obtained by homoepitaxial chemical vapor deposition on a standard moderate‐quality substrate hollowed out by a large square hole. Dislocations are found to propagate vertically and horizontally from the substrate and to terminate at the top surface or at the sides of the...

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Bibliographic Details
Published in:	Advanced materials (Weinheim) Vol. 29; no. 16; pp. np - n/a
Main Authors:	Tallaire, Alexandre, Brinza, Ovidiu, Mille, Vianney, William, Ludovic, Achard, Jocelyn
Format:	Journal Article
Language:	English
Published:	Germany Wiley Subscription Services, Inc 01-04-2017 Wiley-VCH Verlag
Subjects:	Chemical vapor deposition crystal growth diamond Diamonds dislocation Dislocation density Dislocations Engineering Sciences Materials Materials science Reduction Single crystals Substrates dislocation diamond crystal growth chemical vapor deposition
Online Access:	Get full text
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Summary:	A low‐dislocation diamond is obtained by homoepitaxial chemical vapor deposition on a standard moderate‐quality substrate hollowed out by a large square hole. Dislocations are found to propagate vertically and horizontally from the substrate and to terminate at the top surface or at the sides of the hole, thus leaving the central part with a strongly reduced dislocation density.
Bibliography:	ObjectType-Article-1 SourceType-Scholarly Journals-1 ObjectType-Feature-2 content type line 23
ISSN:	0935-9648 1521-4095
DOI:	10.1002/adma.201604823