Charge Scattering and Mobility in Atomically Thin Semiconductors

• Published in: Physical review. X Vol. 4; no. 1; p. 011043
• Main Authors: Ma, Nan, Jena, Debdeep
• Format: Journal Article
• Language: English
• Published: College Park American Physical Society 18-03-2014
• Subjects: Coatings; Comparative studies; Dielectrics; Electron gas; Electron transport; Electronics; Gas density; Graphene; Impurities; Molybdenum disulfide; Phonons; Room temperature; Scattering; Semiconductors; Transistors; Transition metal compounds; Transport properties
• ISSN: 2160-3308; 2160-3308
• DOI: 10.1103/PhysRevX.4.011043

The electron transport properties of atomically thin semiconductors such as MoS2 have attracted significant recent scrutiny and controversy. In this work, the scattering mechanisms responsible for limiting the mobility of single-layer semiconductors are evaluated. The roles of individual scattering rates are tracked as the two-dimensional electron gas density is varied over orders of magnitude at various temperatures. From a comparative study of the individual scattering mechanisms, we conclude that all current reported values of mobilities in atomically thin transition-metal dichalcogenide semiconductors are limited by ionized impurity scattering. When the charged impurity densities are reduced, remote optical phonon scattering will determine the ceiling of the highest mobilities attainable in these ultrathin materials at room temperature. The intrinsic mobilities will be accessible only in clean suspended layers, as is also the case for graphene. Based on the study, we identify the best choices for surrounding dielectrics that will help attain the highest mobilities.