Effect of the spin-on-glass curing atmosphere on In-Ga-Zn-O thin-film transistors

• Published in: Journal of Information Display Vol. 21; no. 4; pp. 229 - 234
• Main Authors: Baek, Yeong Jo, Yun, Eui-Jung, Bae, Byung Seong
• Format: Journal Article
• Language: English
• Published: Seoul Taylor & Francis 01-10-2020; Taylor & Francis Ltd; Taylor & Francis Group; 한국정보디스플레이학회
• Subjects: Atomic force microscopy; Atomic properties; Curing; curing atmosphere; Fourier transforms; gate insulator; Glass; Indium gallium zinc oxide; oxide semiconductor; Performance enhancement; Secondary ion mass spectroscopy; Self alignment; Semiconductor devices; Spectrum analysis; spin-on glass; Thin film transistors; 전기공학
• ISSN: 1598-0316; 2158-1606
• DOI: 10.1080/15980316.2019.1710586

A solution-based spin-on glass (SOG) was applied to the gate insulator of an oxide thin-film transistor (TFT). The curing atmosphere of the SOG was investigated to enhance the performance of the self-aligned top-gate In-Ga-Zn-O (IGZO) TFT. After the SOG layer was formed on an IGZO active layer, curing was performed under N
2
, air, and O
2
atmospheres. The curing under an N
2
atmosphere resulted in the best device characteristics for the IGZO TFT. After curing, the SOG films were investigated via atomic force microscopy, secondary ion mass spectroscopy, Fourier transform infrared spectroscopy, and capacitance measurement. The results showed that the N
2
pile-up at the back surface of the SOG is the main reason for the enhanced performance of the TFT after curing under an N
2
atmosphere.