High-Performance Non-Volatile Organic Ferroelectric Memory on Banknotes

High‐performance non‐volatile polymer ferroelectric memory are fabricated on banknotes using poly(vinylidene fluoride trifluoroethylene). The devices show excellent performance with high remnant polarization, low operating voltages, low leakage, high mobility, and long retention times.

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Bibliographic Details
Published in:	Advanced materials (Weinheim) Vol. 24; no. 16; pp. 2165 - 2170
Main Authors:	Khan, M.A., Bhansali, Unnat S., Alshareef, H. N.
Format:	Journal Article
Language:	English
Published:	Weinheim WILEY-VCH Verlag 24-04-2012 WILEY‐VCH Verlag
Subjects:	Banknotes Devices Electric potential Electricity ferroelectric Ferroelectric materials Ferroelectricity Fraud - prevention & control Leakage memory P(VDF-TrFE) pentacene Polarization polymers Polymers - chemistry Printing - methods Transistors, Electronic Voltage
Online Access:	Get full text
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Description
Summary:	High‐performance non‐volatile polymer ferroelectric memory are fabricated on banknotes using poly(vinylidene fluoride trifluoroethylene). The devices show excellent performance with high remnant polarization, low operating voltages, low leakage, high mobility, and long retention times.
Bibliography:	ArticleID:ADMA201200626 istex:D5C78B8B1939FE1D32D802C351DBE493EF5E7D71 ark:/67375/WNG-N89BVC8T-7 ObjectType-Article-1 SourceType-Scholarly Journals-1 ObjectType-Feature-2 content type line 23
ISSN:	0935-9648 1521-4095
DOI:	10.1002/adma.201200626