Nitrogen and group-IV (Si, Ge) vacancy color centres in nano-diamonds: photoluminescence study at high temperature (25 °C-600 °C)

• Published in: Materials research express Vol. 7; no. 1; pp. 15043 - 15051
• Main Authors: Zaghrioui, Mustapha, Agafonov, Viatcheslav N, Davydov, Valery A
• Format: Journal Article
• Language: English
• Published: Bristol IOP Publishing 01-01-2020; IOP Publishing Ltd
• Subjects: Color centers; color centre; Condensed Matter; Diamonds; Electron phonon interactions; Germanium; germanium vacancy centre; High temperature; nanodiamonds; Nanostructure; nitrogen vacancy centre; Optics; Phonons; Photoluminescence; photoluminescence spectroscopy; Physics; Quantum Physics; Raman spectra; Room temperature; Silicon; silicon vacancy centre; Vacancies
• ISSN: 2053-1591; 2053-1591
• DOI: 10.1088/2053-1591/ab6647

Raman scattering and photoluminescence measurements have been carried out on nano-diamonds containing Nitrogen-vacancy (NV−), Silicon-Vacancy (SiV−) and Germanium-vacancy (GeV−) synthesized by high pressure and high temperature method. Optical zero-phonon-line transition of these negatively charged centres were measured from room temperature up to 600 °C under air. The results show that all nano-diamonds are stable at this temperature range and spectra are reproducible for heating and cooling cycles. Thermal behaviors of linewidth and zero phonon line, for SiV− and GeV− centres, are well described by the second-order electron-phonon interactions involving two-phonon and elastic processes.