Intramolecularly Coordinated Gallium Sulfides: Suitable Single Source Precursors for GaS Thin Films

• Published in: Chemistry : a European journal Vol. 22; no. 52; pp. 18817 - 18823
• Main Authors: Řičica, Tomáš, Světlík, Tomáš, Dostál, Libor, Růžička, Aleš, Růžička, Květoslav, Beneš, Ludvík, Němec, Petr, Bouška, Marek, Jambor, Roman
• Format: Journal Article
• Language: English
• Published: Germany Blackwell Publishing Ltd 23-12-2016; Wiley Subscription Services, Inc
• Subjects: Byproducts; Chemistry; Deposition; Gallium; Group 13 elements; Ligands; NMR spectroscopy; Precursors; spin coating; Sulfides; Synthesis; Thin films; thin-layer films; Group 13 elements; thin-layer films; NMR spectroscopy; spin coating
• ISSN: 0947-6539; 1521-3765
• DOI: 10.1002/chem.201604190

Our studies have been focused on the synthesis of N→Ga coordinated organogallium sulfides [L1Ga(μ‐S)]3 (1) and [L2Ga(μ‐S)]2 (2) containing either N,C,N‐ or C,N‐chelating ligands L1 or L2 (L1 is {2,6‐(Me2NCH2)2C6H3}− and L2 is {2‐(Et2NCH2)‐4,6‐tBu2‐C6H2}−). As the result of the different ligands, compounds 1 and 2 differ mutually in their structure. To change the Ga/S ratio, unusually N→Ga coordinated organogallium tetrasulfide L1Ga(κ2‐S4) (3) was prepared and the unprecedented complex [{2‐[CH{(CH2)3CH3}(μ‐OH)]‐6‐CH2NMe2}C6H3]GaS (4) was also isolated as the minor by‐product of the reaction. Compounds 1–3 were further studied as potential single‐source precursors for amorphous GaS thin film deposition by spin‐coating.
N→Ga coordinated organogallium sulfides containing either N,C,N‐ or C,N‐chelating ligands were prepared. As a result of the different ligands, the compounds differ in their structure. To change the Ga/S ratio, an unusually N→Ga coordinated organogallium tetrasulfide was prepared. All compounds were studied as potential single‐source precursors for GaS thin film deposition by spin‐coating and the obtained values fall into the regions reported for the GaS materials prepared by different techniques.