On-chip growth of semiconductor metal oxide nanowires for gas sensors: A review

On-chip growth of semiconductor metal oxide nanowires for gas sensors: A review

Semiconductor metal oxide nanowires (SMO-NWs) show great potential for novel gas sensor applications because of their distinct properties, such as a high surface area to volume aspect ratio, high crystallinity and perfect pathway for electron transfer (length of NW). SMO-NW sensors can be configured...

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Published in:Journal of science. Advanced materials and devices Vol. 2; no. 3; pp. 263 - 285
Main Authors: Hung, Chu Manh, Le, Dang Thi Thanh, Van Hieu, Nguyen
Format: Journal Article
Language:English
Published: Elsevier B.V 01-09-2017
Elsevier
Subjects:
Gas sensors
Metal oxides
Nanosensors
Nanowires
On-chip growth
Metal oxides
Nanosensors
Nanowires
On-chip growth
Gas sensors
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Abstract Semiconductor metal oxide nanowires (SMO-NWs) show great potential for novel gas sensor applications because of their distinct properties, such as a high surface area to volume aspect ratio, high crystallinity and perfect pathway for electron transfer (length of NW). SMO-NW sensors can be configured as resistors or field-effect transistors for gas detection and different configurations, such as a single NW, multiple NWs, and networked NW films, have been established. Surface-functionalizing NWs with catalyst elements and self-heating NWs provide additional advantages for highly selective and low-power consumption gas sensors. However, an appropriate design of SMO-NWs is of practical importance in enhancing the gas-sensing performance of SMO-NW sensors. The on-chip growth of SMO-NWs possesses many advantages which can thus be effectively used for the large-scale fabrication of SMO-NW sensors with improved gas response and stability. This review aims to provide up-to-date information on the on-chip fabrication of SnO2, ZnO, WO3, CuO, and other SMO-NW sensors. It also discusses a variety of promising approaches that help advance the on-chip fabrication of SMO-NW-based gas sensors and other NW-based devices.
AbstractList Semiconductor metal oxide nanowires (SMO-NWs) show great potential for novel gas sensor applications because of their distinct properties, such as a high surface area to volume aspect ratio, high crystallinity and perfect pathway for electron transfer (length of NW). SMO-NW sensors can be configured as resistors or field-effect transistors for gas detection and different configurations, such as a single NW, multiple NWs, and networked NW films, have been established. Surface-functionalizing NWs with catalyst elements and self-heating NWs provide additional advantages for highly selective and low-power consumption gas sensors. However, an appropriate design of SMO-NWs is of practical importance in enhancing the gas-sensing performance of SMO-NW sensors. The on-chip growth of SMO-NWs possesses many advantages which can thus be effectively used for the large-scale fabrication of SMO-NW sensors with improved gas response and stability. This review aims to provide up-to-date information on the on-chip fabrication of SnO2, ZnO, WO3, CuO, and other SMO-NW sensors. It also discusses a variety of promising approaches that help advance the on-chip fabrication of SMO-NW-based gas sensors and other NW-based devices.
Author Van Hieu, Nguyen
Hung, Chu Manh
Le, Dang Thi Thanh
Author_xml – sequence: 1
  givenname: Chu Manh
  surname: Hung
  fullname: Hung, Chu Manh
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  fullname: Le, Dang Thi Thanh
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  givenname: Nguyen
  surname: Van Hieu
  fullname: Van Hieu, Nguyen
  email: hieu@itims.edu.vn, hieu.nguyenvan@hust.edu.vn
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Snippet Semiconductor metal oxide nanowires (SMO-NWs) show great potential for novel gas sensor applications because of their distinct properties, such as a high...
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SubjectTerms Gas sensors
Metal oxides
Nanosensors
Nanowires
On-chip growth
Title On-chip growth of semiconductor metal oxide nanowires for gas sensors: A review
URI https://dx.doi.org/10.1016/j.jsamd.2017.07.009
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